Part Number Hot Search : 
IR2302 50110 FAN3217 AS368M 1N4701 T3230 T82V2 100M10
Product Description
Full Text Search

NX5302EJ - 1310 nm InGaAsP MQW FP laser diode for fiber optic communications.

NX5302EJ_9097513.PDF Datasheet


 Full text search : 1310 nm InGaAsP MQW FP laser diode for fiber optic communications.


 Related Part Number
PART Description Maker
NX8300CE-CC NX8300BE-CC NX8300BE NECs 1310 nm InGaAsP MQW-DFB LASER DIODE
InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE FOR 2.5 Gb/s APPLICATION
CEL[California Eastern Labs]
http://
NX6301SH NX6301SI NX6301SJ NX6301SK NX6301GK NX630 1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications.
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
NEC
CEL[California Eastern Labs]
NX5307EK-AZ NX5307 NX5307EH-AZ NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s INTRA-OFFICE APPLICATION
CEL[California Eastern Labs]
NX6306 NX6306GK NX6306GH 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
California Eastern Laboratories
NX5311GH NX5311GK NX5311 NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
CEL[California Eastern Labs]
NX5302 NX5302SK 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS 1310纳米InGaAsP多量子阱FP激光二极管能为光纤通信软件
California Eastern Laboratories, Inc.
NDL7673P NDL7673PC NDL7673PD 1310 nm OPTICAL CATV/ANALOG APPLICATIONS InGaAsP MQW-DFB LASER DIODE MODULE
NEC
NDL7408P_00 NDL74081KC NDL74082KC NDL7408P1K NDL74 1310 nm InGaAsP STRAINED MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLE MODE FIBER
CEL[California Eastern Labs]
NDL7401P_00 NDL7401P NDL7401P1 NDL7401P1C NDL7401P 1310 nm InGaAsP STRAINED MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLE MODE FIBER
CEL[California Eastern Labs]
NX7327BF-AA NECs 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (110 mW MIN)
California Eastern Laboratories
http://
NX7361JB-BC NX7361JB-BC-AZ NECs 1310 nm InGaAsP MQW FP PULSD LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (150 mW MIN) 邻舍1310纳米计划生育PULSD InGaAsP多量子阱激光二极管应用浸时域反射计50毫瓦最小包装)
California Eastern Laboratories, Inc.
NX6508GK51 NX6508GH47 NX6508GH51 NX6508GH59 NX6508 InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1510 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1470 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1590 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1570 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1490 nm (typ).
NEC
 
 Related keyword From Full Text Search System
NX5302EJ Silicon NX5302EJ terminals description NX5302EJ Processors NX5302EJ ICPRICE NX5302EJ schematic
NX5302EJ resistor NX5302EJ Resistor NX5302EJ Volt NX5302EJ 描述 NX5302EJ Transistors
 

 

Price & Availability of NX5302EJ

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.33072805404663